It has some application in the designing areas of power amplifiers. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible.Ībstract: The Indium Gallium Arsenide (InGaAs) based MOSFETs have been widely used in the research of high-speed devices with higher frequency. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. Abstract: The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures.
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